DC8550 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DC8550
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 2W output amplifier of portable
radios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-1.5
A
Base Current
IB
-500
mA
Total Power Dissipation
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
PD
PD
TJ
TSTG
1
W
2
W
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO -40
-
-
Collector-Emitter Breakdown Voltage BVCEO -25
-
-
Emitter-Base Breakdown Volatge
BVEBO
-6
-
-
Collector Cutoff Current
ICBO
-
-
-0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
-0.1
-
-0.5
-
-1.2
-
-1
DC Current Gain⁽¹⁾
hFE1
45
hFE2
85
-
-
-
500
hFE3
40
-
-
Transition Frequency
fT
100
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE2
Rank
B
C
Range
85~160
120~200
D
160~300
E
250~500
Unit
V
V
V
µA
µA
V
V
V
-
-
-
MHz
Test Conditions
IC=-100µA
IC=-2mA
IE=-100µA
VCB=-35V
VEB=-6V
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
IC=-10mA, VCE=-1V
IC=-5mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-800mA, VCE=-1V
IC=-50mA, VCE=-10V, f=100MHz