DC8050S Datasheet, PDF (1/2 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DC8050S
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
700
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
625
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 25
-
-
Collector-Emitter Breakdown Voltage BVCEO 20
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
0.1
-
0.6
-
1
DC Current Gain⁽¹⁾
hFE1
85
hFE2
-
-
500
170
-
Transition Frequency
fT
150
-
-
Output Capacitance
Cob
-
-
10
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=20V
VEB=6V
IC=0.5A, IB=50mA
IC=150mA, VCE=1V
IC=150mA, VCE=1V
IC=500mA, VCE=1V
IC=20mA, VCE=10V, f=100MHz
VCB=10V, f=1MHz
Classification of hFE1
Rank
B
C
Range
85~160
100~200
D
150~300
E
250~500