BU407 Datasheet, PDF (1/1 Pages) STMicroelectronics – HIGH CURRENT NPN SILICON TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BU407
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in TV horizontal output and
switching applications.
TO-220AB
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
7
A
Base Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
IB
PD
TJ
TSTG
4
A
60
W
+150
o_C
-55 to +150 ^oC
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
(2.1.5040) ^Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Emitter Breakdown Voltage
BVCEO
150
-
Collector Cutoff Current
ICES
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
DC Current Gain⁽¹⁾
hFE1
25
-
hFE2
35
-
hFE3
10
-
Transition Frequency
fT
10
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max Unit
Test Conditions
-
V IC=100mA, IB=0
5
mA VCE=400V
1
mA VEB=6V, IC=0
1
V IC=5A, IB=0.5A
1.2
V IC=5A, IB=0.5A
-
- IC=0.5A, VCE=5V
200
- IC=2A, VCE=5V
-
- IC=2A, VCE=5V
-
MHz IC=0.5A, VCE=10V, f=1MHz
Classification of hFE2
Rank
B
C
Range
35~85
75~125
D
115~200