BR2505L Datasheet, PDF (1/2 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
BR2505L
THRU
BR2510L
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts
CURRENT - 25 Amperes
FEATURES
* Plastic case with heatsink for Maximum Heat Dissipation
* Diffused Junction
* High current capability
* Surge overload ratings - 300 Amperes
* Low forward voltage drop
* High Reliability
* Designed for saving mounting space
MECHANICAL DATA
* Case: Molded plastic with heatsink
* Epoxy: UL 94V-0 rate flame retardant
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: As marked
* Mounting position: Any
* Weight: 30 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
BR-25L
.140(3.6)
.120(3.1)
METAL HEAT SINK
.422(11.2)
.432(11.0)
.040(1.2)
.550
.200 ^(13.9)
(5.1) ^MIN.
1.13(28.7)
1.12(28.4)
AC
1.13(28.7)
1.12(28.4)
.750 _MIN.
(19.1)
Dimensions in inches and (millimeters)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 55^oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage Drop per element at 12.5A DC
Maximum DC Reverse Current at Rated
@TA = 25^oC
DC Blocking Voltage per element
@TA = 100^oC
I²t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Case per leg.
SYMBOL
VRRM
VRMS
VDC
IO
BR2505L BR251L BR252L BR254L BR256L BR258L BR2510L UNITS
50
100
200
400
600
800 1000 Volts
35
70
140
280
420
560
700 Volts
50
100
200
400
600
800 1000 Volts
25
Amps
IFSM
300
Amps
VF
IR
I²t
CJ
RθJ C
TJ,TSTG
1.2
10
1000
374
300
2.0
-55 to +150
Volts
µAmps
A²Sec
pF
0_C/W
0_C