BR2505 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER

DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
BR2505
THRU
BR2510
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts
CURRENT - 25 Amperes
FEATURES
* Plastic case with heatsink for Maximum Heat Dissipation
* Surge overload ratings-400 Amperes
* Low forward voltage drop
MECHANICAL DATA
* Case: Molded plastic with heatsink
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Plated .25"(6.35mm) Faston lugs, Solderable per
MIL-STD-202E, Method 208 guaranteed
* Polarity: As marked
* Mounting position: Any
* Weight: 30 grams
BR-25
TYP
METAL HEAT SINK
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 55^oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage Drop per element at 12.5A DC
Maximum DC Reverse Current at Rated
@TA = 25^oC
DC Blocking Voltage per element
I²t Rating for Fusing (t<8.3ms)
@TA = 100^oC
Typical Junction Capacitance ( Note1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Case per leg.
SYMBOL
VRRM
VRMS
VDC
IO
BR2505
50
35
50
BR251
100
70
100
BR252
200
140
200
BR254
400
280
400
25
BR256
600
420
600
BR258
800
560
800
BR2510 UNITS
1000 Volts
700 Volts
1000 Volts
Amps
IFSM
400
Amps
VF
IR
I²t
CJ
RθJ C
TJ,TSTG
1.1
10
500
374
300
2.5
-55 to + 150
Volts
uAmps
A²Sec
pF
0_C/W
0_C
248
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