BF422 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – SILICON NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER,COLOR TV CHROMA OUTPUT)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BF422
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for video B-class power stages in TV
receivers.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
250
V
250
V
5
V
50
mA
830
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 250
-
Collector-Emitter Breakdown Voltage
BVCEO 250
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
DC Current Gain⁽¹⁾
hFE
50
-
Transition Frequency
fT
60
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max Unit
Test Conditions
-
V IC=100µA
-
V IC=1mA
-
V IE=10µA
0.1 µA VCB=200V
10
µA VEB=5V
0.6
V IC=30mA, IB=3mA
-
- IC=25mA, VCE=20V
- MHz IE=10mA, VCE=10V, f=100MHz