BD237D Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BD237D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for medium power linear and switching
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (peak)
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
PD
TJ
TSTG
Rating Unit
100
V
80
V
5
V
2
A
6
A
25
W
+150
o_C
-55 to +150 ^oC
TO-126ML
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.146(3.70)
.136(3.44)
.148(3.75)
.138(3.50)
.060(1.52)
.050(1.27)
.300(7.62)
.290(7.37)
123
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
.056(1.42)
.046(1.17)
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.180
(4.56)
Typ
.033(0.84)
.027(0.68)
(2.0.2980) ^Typ
.027(0.69)
.017(0.43)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO 100
-
-
V IC=1mA
Collector-Emitter Breakdown Voltage
BVCEO 80
-
-
V IC=100mA
Emitter-Base Breakdown Voltage
BVEBO
5
-
-
V IE=100µA
Collector Cutoff Current
ICBO
-
-
0.1 mA VCB=100V
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
1
mA VEB=5V
-
0.6
V IC=1A, IB=0.1A
-
1.3
V IC=1A, VCE=2V
DC Current Gain⁽¹⁾
hFE1
40
-
hFE2
25
-
-
- IC=150mA, VCE=2V
-
- IC=1A, VCE=2V
Transition Frequency
fT
3
-
- MHz IC=250mA, VCE=10V, f=100MHz
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%