BC857 Datasheet, PDF (1/1 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTORS

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC857
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film
circuits.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
225
mW
+150
o_C
-55 to +150 ^oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -50
-
Collector-Emitter Breakdown Voltage BVCEO -45
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
Collector Cutoff Current
ICBO
-
-
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-90
-250
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-700
-900
Base-Emitter On Voltage
DC Current Gain⁽¹⁾
VBE(on)1 -600
-
VBE(on)2
-
-
hFE
110
-
Transition Frequency
fT
-
150
Output Capacitance
Cob
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
-15
-300
-650
-
-
-750
-820
800
-
6
Classification of hFE
Rank
A
Range
110~250
B
200~475
C
420~800
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
-
MHz
pF
Test Conditions
IC=-10µA
IC=-1mA
IE=-1µA
VCB=-30V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
VCB=-10V, f=1MHz, IE=0