BC848 Datasheet, PDF (1/1 Pages) AUK corp – NPN Silicon Transistor (General purpose application Switching application)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC848
BC849
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film
circuits.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
30
V
30
V
5
V
100
mA
225
mW
+150
o_C
-55 to +150 ^oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ Max
Collector-Base Breakdown Volatge
BVCBO 30
-
-
Collector-Emitter Breakdown Volatge BVCEO 30
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
15
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
0.25
0.2
0.6
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
0.7
-
VBE(sat)2
-
0.9
-
Base-Emitter On Voltage⁽¹⁾
VBE(on) 0.58
-
0.7
DC Current Gain⁽¹⁾
BC848
110
-
800
hFE
BC849
200
-
800
Transition Frequency
fT
100
-
-
Output Capacitance
Cob
-
3.5
6
Noise Figure
BC848
-
NF
BC849
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
10
-
4
Classification of hFE
Rank
A
B
C
Range
110~220
200~450
420~800
Unit
Test Conditions
V IC=100µA, IE=0
V IC=1mA, IB=0
V IE=10µA, IC=0
nA VCB=30V, IE=0
V IC=10mA, IB=0.5mA
V IC=100mA, IB=5mA
V IC=10mA, IB=0.5mA
V IC=100mA, IB=5mA
V IC=2mA, VCE=5V
- IC=2mA, VCE=5V
MHz
pF
dB
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz
VCE=5V, IC=200µA, f=1KHz,
RS=2KΩ, B=200Hz