BC846 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistors

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC846
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film
circuits.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
65
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
225
mW
+150
o_C
-55 to +150 ^oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 80
-
-
Collector-Emitter Breakdown Voltage BVCEO 65
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICBO
-
-
15
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
90
250
200
600
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
700
-
VBE(sat)2
-
900
-
Base-Emitter On Voltage
DC Current Gain⁽¹⁾
VBE(on)1 580
-
700
VBE(on)2
-
-
770
hFE
110
-
800
Transition Frequency
fT
-
300
-
Output Capacitance
Cob
-
3.5
6
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE
Rank(Marking)
A
B
C
Range
110~220
200~450
420~800
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
-
MHz
pF
Test Conditions
IC=10µA
IC=1mA
IE=1µA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=2mA, VCE=5V
IC=10mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, VCE=5V
VCB=10V, f=1MHz, IE=0