BC635 Datasheet, PDF (1/1 Pages) Motorola, Inc – High Current Transistors

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC635
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier
applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Emitter Voltage
VCES
45
V
VCEO
45
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
1
W
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
2^o Typ
2^o Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Emitter Breakdown Voltage
BVCEO
45
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
0.1
-
0.5
-
1
DC Current Gain⁽¹⁾
hFE1
25
hFE2
40
-
-
-
250
hFE3
25
-
-
Transition Frequency
fT
-
100
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
µA
µA
V
V
-
-
-
MHz
Test Conditions
IC=10mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
IC=500mA, IB=50mA
IC=500mA, VCE=2V
IC=5mA, VCE=2V
IC=150mA, VCE=2V
IC=500mA, VCE=2V
IC=10mA, VCE=5V, f=50MHz