BC548 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC548
BC549
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in drive stage of audio amplifiers.
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
30
V
30
V
5
V
100
mA
500
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 30
Collector-Emitter Breakdown Volatge BVCEO 30
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
Base-Emitter On Voltage⁽¹⁾
DC Current Gain⁽¹⁾
VBE(on)1
VBE(on)2
hFE
0.58
-
110
Transition Frequency
fT
-
Output Capacitance
Cob
-
Noise Figure
BC548
-
NF
BC549
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
-
-
-
-
-
-
-
15
0.2
0.6
0.9
1.1
-
0.7
-
0.77
-
800
300
-
3.5
6
2
10
1.4
4
Classification of hFE
Rank
A
Range
110~220
B
200~450
C
420~800
Unit
V
V
V
nA
V
V
V
V
-
MHz
pF
dB
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=2mA, VCE=5V
IC=10mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0
VCE=-5V, IC=-200µA, f=1KHz,
RS=2KΩ, B=200Hz