BC546 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistors

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC546
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of audio amplifiers.
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
65
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
625
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 80
-
-
Collector-Emitter Breakdown Voltage BVCEO 65
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICBO
-
-
15
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
250
-
600
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
700
-
VBE(sat)2
-
900
-
Base-Emitter On Voltage
DC Current Gain⁽¹⁾
VBE(on)1
-
-
770
VBE(on)2 580
-
700
hFE
110
-
800
Transition Frequency
fT
-
300
-
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
4.5
Classification of hFE
Rank
A
Range
110~220
B
200~450
C
420~800
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, VCE=5V
IC=2mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0