BC338 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC338
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for driver and output stage of audio
amplifiers.
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
625
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 30
-
-
Collector-Emitter Breakdown Voltage BVCEO 25
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
0.1
-
0.7
-
1.2
DC Current Gain⁽¹⁾
hFE1
100
-
630
hFE2
40
-
-
Transition Frequency
fT
-
210
-
Output Capacitance
Cob
-
12
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=25V, IE=0
IC=500mA, IB=50mA
IC=300mA, VCE=1V
IC=100mA, VCE=1V
IC=300mA, VCE=1V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0
Classification of hFE1
Rank
16
25
Range
100~250
160~400
40
250~630