BC307 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistors(PNP)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC307
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier
applications.
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCES
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-50
V
-45
V
-5
V
-100
mA
500
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ Max
BVCES -50
-
-
Collector-Emitter Breakdown Volatge
BVCEO -45
-
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
Collector Cutoff Current
ICES
-
-2
-15
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
-0.3
-0.5 -0.6
Base-Emitter Saturation Voltage⁽¹⁾
Base-Emitter On Voltage⁽¹⁾
VBE(sat)1
-
-0.7 -0.8
VBE(sat)2
-
-0.85 -1.1
VBE(on) -0.55 -0.62 -0.7
DC Current Gain(1)
hFE
120
-
800
Transition Frequency
fT
-
130
-
Output Capacitance
Cob
-
-
6
Noise Figure
NF
-
-
10
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE
Rank
A
Range
120~220
B
180~460
C
380~800
Unit
V
V
V
nA
V
V
V
V
V
-
MHz
pF
dB
Test Conditions
IC=-10µA, VEB=0
IC=-2mA, IB=0
IE=-10µA, IC=0
VCE=-45V, IB=0
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-2mA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V, f=50MHz
VCB=-10V, f=1MHz
VCE=-5V, IC=-200µA, f=1KHz,
RS=2KΩ, B=200Hz