BC237 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistors

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC237
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of audio amplifiers.
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCES
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
50
V
45
V
5
V
100
mA
350
mW
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
TO-92
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
BVCES 50
-
-
Collector-Emitter Breakdown Voltage
BVCEO 45
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICES
-
-
15
Emitter Cutoff Current
IEBO
-
-
100
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
0.2
-
0.6
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
1.05
-
0.83
Base-Emitter On Voltage⁽¹⁾
VBE(on) 0.55
-
0.7
DC Current Gain⁽¹⁾
hFE1
50
-
-
hFE2
120
-
800
hFE3
60
-
-
Transition Frequency
fT
150
-
-
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
4.5
Classification of hFE2
Rank
A
B
C
Range
120~220
180~460
300~800
Unit
V
V
V
nA
nA
V
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=100µA, VEB=0
IC=2mA, IB=0
IE=100µA, IC=0
VCB=50V, IE=0
VEB=4V, IC=0
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=2mA, VCE=5V
IC=10µA, VCE=5V
IC=2mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, IE=0, f=1MHz