BC184 Datasheet, PDF (1/1 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC184
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
45
V
30
V
6
V
100
mA
350
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO 45
Collector-Emitter Breakdown Voltage BVCEO 30
Emitter-Base Breakdown Volatge
BVEBO
6
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)1
VBE(on)2
-
0.55
DC Current Gain⁽¹⁾
VBE(on)3
-
hFE
240
Transition Frequency
fT
150
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max
-
-
-
-
-
-
-
15
-
15
0.07 0.25
0.2
0.6
-
1.2
0.5
-
0.62 0.7
0.83
-
-
900
-
-
-
5
Classification of hFE
Rank
B
Range
240~500
C
450~900
Unit
V
V
V
nA
nA
V
V
V
V
V
V
-
MHz
pF
Test Conditions
IC=10µA, IE=0
IC=2mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=4V, IC=0
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=0.1mA, VCE=5V
IC=2mA, VCE=5V
IC=100mA, VCE=5V
IC=2mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz, IE=0