BAS85 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
BAS85
TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY BARRIER DIODES
VOLTAGE - 30 Volts
CURRENT - 0.2 Amperes
FEATURES
* For general purpose applications
* This diode features very low turn-on voltage and
fast switching. This device is protected by a PN
junction guard ring against excessive voltage,
such as electrostatic discharge(ESD)
* Double slug type construction
Mini Melf(DL-35)
MECHANICAL DATA
* Case: Glass case Mini Melf(DL-35)
* Terminals: Solder plated solderable per
MIL-STD-750, Method 2026
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.05 gram approx.
.142(3.6)
.134(3.4)
.016(0.4)
.008(0.2)
.016(0.4)
.008(0.2)
CATHODE MARK
.059(1.5)
.055(1.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA=75 ^oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 0.1A DC
Maximum DC Reverse Current at Rated DC Blocking Voltage, TA=25^oC
Typical Thermal Resistance (Note1)
Typical Junction Capacitance (Note 2)
Storage Operating Temperature Range
NOTES : 1. Terminals maintained at specified at ambient temperature.
2. Measured at 1 MHz and applied reverse voltage of 1.0 volts.
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
VF
IR
RθJA
CJ
TJ, TSTG
Dimensions in inches and (millimeters)
BAS85
30
21
30
0.2
4.0
0.8
2.0
300
10
-55 to +125
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µAmps
0_{C/ W}
pF
0_C