BAS40 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
BAS40
BAS40-04
BAS40-05
BAS40-06
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE - 40 Volts
CURRENT - 0.2 Ampere
FEATURES
* For general purpose applications
* Low forward voltage drop.
* Fast switching time.
* Protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharge(ESD).
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Terminals: Solder plated, solderable per
MIL-STD-202E, Method 208 guaranteed
* Mounting position: Any
* Weight: 0.008 grams Approx.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.020(0.5)
.012(0.3)
SOT-23
.063(1.6) .108(2.8)
.047(1.2) .083(2.1)
.091(2.3)
.067(1.7)
.120(3.0)
.110(2.8)
.045(1.2)
.034(0.9)
.051(1.3)
.035(0.9)
.0071(0.18)
.0035(0.09)
.026(0.7)
.010(0.3)
(0.0.1004)Max
.027(0.7)
.013(0.3)
Dimensions in inches and (millimeters)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at TA=25^oC
Peak Forward Surge Current at t=1.0S
Maximum Instantaneous Forward Voltage
Maximum DC Reverse Current at TA=25^oC, VR=25V
Typical Junction Capacitance (Note)
Storage Operating Temperature Range
NOTES : Measured at 1 MHz and applied reverse voltage of 0 volts.
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
VF
IR
CJ
TJ, TSTG
BAS40
BAS40-04 BAS40-05
40
28
40
0.2
0.6
1.0 @ IF=40mA
0.38 @ IF=1mA
1.0
5.0
-55 to +150
BAS40-06
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
µAmps
pF
0_C
SINGLE
COMMON ANODE COMMON CATHODE
SERIES
BAS40
BAS40-06
BAS40-05
Pin Configuration (Top View)
BAS40-04