2SD965 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD965
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use as AF output amplifier and flash unit.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
40
V
20
V
7
V
5
A
750
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 40
-
-
Collector-Emitter Breakdown Voltage BVCEO 20
-
-
Emitter-Base Breakdown Volatge
BVEBO
7
-
-
Collector Cutoff Current
ICBO
-
-
0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
0.1
0.35
1
DC Current Gain⁽¹⁾
hFE1
230
-
800
hFE2
150
-
-
Transition Frequency
fT
-
150
-
Output Capacitance
Cob
-
-
50
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=10V, IE=0
VEB=7V, IC=0
IC=3A, IB=100mA
IC=0.5A, VCE=2V
IC=2A, VCE=2V
IE=50mA, VCE=6V
VCB=20V, f=1MHz, IE=0
Classification of hFE1
Rank
Q
R
Range
230~380
340~600
S
560~800