2SD882S Datasheet, PDF (1/1 Pages) Unisonic Technologies – MEDIUM POWER LOW VOLTAGE TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD882S
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 0.75W audio
amplifier, voltage regulator, DC-DC converter and
relay driver.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
40
V
30
V
5
V
3
A
750
mW
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
40
-
Collector-Emitter Breakdown Voltage
BVCEO
30
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
DC Current Gain⁽¹⁾
hFE1
30
-
hFE2
100
-
Transition Frequency
fT
-
90
Output Capacitance
Cob
-
45
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE2
Rank
Q
P
Range
100~200
160~320
E
250~500
Max Unit
Test Conditions
-
V
IC=100µA
-
V IC=1mA
-
V
IE=10µA
1
µA VCB=30V
1
µA VEB=3V
0.5
V IC=2A, IB=0.2A
2
V IC=2A, IB=0.2A
-
-
IC=20mA, VCE=2V
500
-
IC=1A, VCE=2V
-
MHz IC=0.1A, VCE=5V
-
pF IE=0, VCB=10V, f=1MHz