2SD882D Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD882D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier,
voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current(DC)
Total Power Dissipation(TC=25^oC)
Total Power Dissipation(TA=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
IB
PD
PD
TJ
TSTG
Rating Unit
40
V
30
V
5
V
3
A
7
A
0.6
A
10
W
1
W
+150
o_C
-55 to +150 ^oC
TO-126ML
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.146(3.70)
.136(3.44)
.148(3.75)
.138(3.50)
.060(1.52)
.050(1.27)
.300(7.62)
.290(7.37)
123
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
.056(1.42)
.046(1.17)
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.180
(4.56)
Typ
.033(0.84)
.027(0.68)
.090
(2.28)
Typ
.027(0.69)
.017(0.43)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO
40
-
Collector-Emitter Breakdown Voltage
BVCEO
30
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
0.3
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
1
DC Current Gain⁽¹⁾
hFE1
30
150
hFE2
100
200
Transition Frequency
fT
-
90
Output Capacitance
Cob
-
45
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE2
Rank
Q
P
E
Range
100~200
160~320
250~500
Max Unit
Test Conditions
-
V
IC=100µA
-
V IC=1mA
-
V
IE=10µA
1
µA VCB=30V
1
µA VEB=3V
0.5
V IC=2A, IB=0.2A
2
V IC=2A, IB=0.2A
-
-
IC=20mA, VCE=2V
500
-
IC=1A, VCE=2V
-
MHz IC=0.1A, VCE=5V
-
pF IE=0, VCB=10V, f=1MHz