2SD880 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD880
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
3
A
Base Current
IB
0.5
A
Total Power Dissipation
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
PD
PD
TJ
TSTG
1.5
W
30
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
60
Collector-Emitter Breakdown Voltage
BVCEO
60
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
DC Current Gain⁽¹⁾
hFE
60
Transition Frequency
fT
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
V IC=1mA, IE=0
-
-
V IC=50mA, IB=0
-
0.1 mA VCB=60V, IE=0
-
0.1 mA VEB=7V, IC=0
-
1
V IC=3A, IB=0.3A
-
1
V IC=0.5A, VCE=5V
-
300
- IC=0.5A, VCE=5V
3
- MHz IC=0.5A, VCE=5V
Classification of hFE
Rank
O
Range
60~120
Y
100~200
GR
150~300