2SD879 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – 1.5V, 3V Strobe Applications

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD879
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1.5V and 3V electronic flash.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEX
20
V
VCEO
10
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
3
A
Collector Current (pulse)
IC
5
A
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
750
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
30
-
-
V
IC=10µA
BVCEX
20
-
-
V
IC=1mA,VBE=3V
Collector-Emitter Breakdown Voltage
BVCEO
10
-
-
V
IC=1mA
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
V
IE=10µA
Collector Cutoff Current
ICBO
-
-
100
nA
VCB=20V
Emitter Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
DC Current Gain⁽¹⁾
IEBO
-
VCE(sat)
-
hFE
140
-
100
0.3
0.4
210 400
nA
VBE=4V
V
IC=3A, IB=60mA
-
IC=3A, VCE=2V
Transition Frequency
fT
-
200
-
MHz IC=50mA, VCE=10V
Output Capacitance
Cob
-
30
-
pF
VCB=10V, f=1MHz
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%