2SD667A Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD667A
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
120
V
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
Collector Current (pulse)
IC
1
A
IC
2
A
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
900
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
120
-
-
V
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO
100
-
-
V
IC=1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
V
IE=10µA, IC=0
Collector Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
Base-Emitter On Voltage⁽¹⁾
ICBO
-
VCE(sat)
-
VBE(on)
-
-
10
µA VCB=100V, IE=0
-
1
V IC=500mA, IB=50mA
-
1.5
V
IC=150mA, VCE=5V
DC Current Gain⁽¹⁾
hFE1
60
-
200
-
IC=150mA, VCE=5V
hFE2
30
-
-
-
IC=500mA, VCE=5V
Transition Frequency
fT
-
140
-
MHz IC=150mA, VCE=5V
Output Capacitance
Cob
-
12
-
pF VCB=10V, f=1MHz, IE=0
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE
Rank
B
Range
60~120
C
100~200