2SD313 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD313
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general-purpose amplifier and switching
applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
PD
TJ
TSTG
60
V
60
V
5
V
3
A
2
W
30
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Volatge
BVCBO
60
-
Collector-Emitter Breakdown Voltage
BVCEO
60
-
Emitter-Base Breakdown Voltage
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
ICEO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
-
DC Current Gain⁽¹⁾
hFE1
40
-
hFE2
40
-
Transition Frequency
fT
-
8
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE1
Rank
C
D
Range
40~80
60~120
E
100~200
F
160~320
Max Unit
Test Conditions
-
V IC=1mA, IE=0
-
V IC=10mA, IB=0
-
V IE=100µA, IC=0
0.1 mA VCB=20V, IE=0
5
mA VCE=60V, IB=0
1
mA VEB=4V, IC=0
1
V IC=2A, IB=0.2A
1.5
V IC=1A, VCE=2V
320
- IC=1A, VCE=2V
-
- IC=0.1A, VCE=2V
-
MHz IC=0.5A, VCE=5V