2SD1616A Datasheet, PDF (1/1 Pages) Micro Electronics – NPN SILICON TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD1616A
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency power amplifier and
medium-speed switching applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
1
A
Collector Current (pulse)
IC
2
A
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
750
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 120
-
-
Collector-Emitter Breakdown Voltage
BVCEO
60
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICBO
-
-
0.1
Emitter Cutoff Current
IEBO
-
-
0.1
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
0.15
0.3
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
0.9
1.2
Base-Emitter On Voltage⁽¹⁾
VBE(on)
0.6
-
0.7
DC Current Gain⁽¹⁾
hFE1
135
-
600
hFE2
81
-
-
Transition Frequency
fT
100
160
-
Output Capacitance
Cob
-
-
19
Turn-On Time
ton
-
0.07
-
Storage Time
ts
-
0.95
-
Fall Time
tf
-
0.07
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE1
Rank
Y
G
L
Range
135~270
200~400
300~600
Unit
V
V
V
µA
µA
V
V
V
-
-
MHz
pF
µS
µS
µS
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=60V
VEB=6V
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=50mA, VCE=2V
IC=100mA, VCE=2V
IC=1A, VCE=2V
IC=100mA, VCE=2V
VCB=10V, f=1MHz, IE=0
IC=100mA, VCE=10V
IB1=IB2=10mA
VBE(off)=-2 ~ -3V