2SC945 Datasheet, PDF (1/1 Pages) NEC – NPN Silicon Transistor(AF amplifier and low speed switching)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SC945
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Base Current
IB
50
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
250
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 60
-
-
Collector-Emitter Breakdown Voltage BVCEO 50
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
0.1
0.1
0.3
DC Current Gain⁽¹⁾
hFE1
50
-
-
hFE2
135
-
600
Transition Frequency
fT
150
-
600
Output Capacitance
Cob
-
-
4
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=5V, IB=0
IC=100mA, IB=10mA
IC=0.1mA, VCE=6V
IC=1mA, VCE=6V
IC=10mA, VCE=6V, f=100MHz
VCB=10V, f=1MHz, IE=0
Classification of hFE2
Rank
Q
P
Range
135~270
200~400
K
300~600