2SC4242 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTOR(7A,400V,40W)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SC4242
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high speed switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
450
V
400
V
10
V
7
A
2
A
40
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO 450
-
-
V IC=1mA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO 450
-
-
V IC=100mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO
10
-
-
V IE=1mA, IC=0
Collector Cutoff Current
ICBO
-
-
100 µA VCB=450V, IE=0
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
100 µA VEB=10V, IC=0
-
0.8
V IC=4A, IB=0.8A
-
1.2
V IC=4A, IB=0.8A
DC Current Gain⁽¹⁾
hFE1
15
-
55
- IC=0.8A, VCE=5V
hFE2
10
-
-
- IC=2A, VCE=5V
hFE3
10
-
-
- IC=4A, VCE=5V
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE1
Rank
A
Range
15~28
B1
22~35
B2
29~42
B3
36~49
B4
43~55