2SC1815 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SC1815
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier
general purpose amplification.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
TJ
TSTG
Rating Unit
60
V
50
V
5
V
150
mA
50
mA
400
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO 60
-
Collector-Emitter Breakdown Voltage BVCEO 50
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
DC Current Gain⁽¹⁾
hFE1
70
-
hFE2
25
-
Transition Frequency
fT
80
-
Output Capacitance
Cob
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
100
100
0.25
1
700
-
-
3.5
Classification of hFE1
Rank
O
Y
Range
70~140
120~240
GR
200~400
BL
350~700
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=2mA, VCE=6V
IC=150mA, VCE=6V
IC=1mA, VCE=10V
VCB=10V, f=1MHz, IE=0