2SC1623 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SC1623
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
60
V
50
V
5
V
100
mA
200
mW
+150
o_C
-55 to +150 ^oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 60
-
-
Collector-Emitter Breakdown Voltage BVCEO 50
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
0.1
Emitter Cutoff Current
IEBO
-
-
0.1
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
0.3
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
1
Base-Emitter On Voltage⁽¹⁾
VBE(on) 0.55
-
0.65
DC Current Gain⁽¹⁾
hFE
90
200
600
Transition Frequency
fT
250
-
-
Output Capacitance
Cob
-
3
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
V
V
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=1mA, VCE=6V
IC=1mA, VCE=6V
IC=10mA, VCE=6V
VCB=6V, f=1MHz, IE=0
Classification of hFE
Rank
L4
Range
90~180
L5
135~270
L6
200~400
L7
300~600