2SC1213 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SC1213
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
50
V
50
V
4
V
500
mA
400
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO
50
-
-
Collector-Emitter Breakdown Voltage
BVCEO
50
-
-
Emitter-Base Breakdown Volatge
BVEBO
4
-
-
Collector Cutoff Current
ICBO
-
-
0.5
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
0.5
-
0.6
-
1.2
DC Current Gain⁽¹⁾
hFE1
60
hFE2
35
-
320
-
-
Transition Frequency
fT
100
160
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
V
-
-
MHz
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=5V, IC=0
IC=150mA, IB=15mA
IC=150mA, IB=15mA
IC=10mA, VCE=3V
IC=500mA, VCE=3V
IC=20mA, VCE=6V
Classification of hFE1
Rank
B
C
Range
60~120
100~200
D
160~320