2SB857 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SB857
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak)
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
PD
TJ
TSTG
Rating Unit
-70
V
-50
V
-5
V
-4
A
-8
A
40
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO
-70
Collector-Emitter Breakdown Voltage
BVCEO
-50
Emitter-Base Breakdown Voltage
BVEBO
-5
Collector Cutoff Current
ICBO
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
Base-Emitter On Voltage⁽¹⁾
VBE(on)
-
DC Current Gain⁽¹⁾
hFE1
35
hFE2
60
Transition Frequency
fT
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ Max Unit
Test Conditions
-
-
V IC=-10µA, IE=0
-
-
V IC=-50mA, IB=0
-
-
V IE=-10µA, IC=0
-
-1
µA VCB=-50V, IE=0
-
-1
V IC=-2A, IB=-0.2A
-
-1
V IC=-1A, VCE=-4V
-
-
- IC=-0.1A, VCE=-4V
-
320
- IC=-1A, VCE=-4V
15
- MHz IC=-500mA, VCE=-4V, f=100MHz
Classification of hFE2
Rank
B
C
Range
60~120
100~200
D
160~320