2SB772S Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SB772S
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 0.75W audio
amplifier, voltage regulator, DC-DC converter and
relay driver.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-40
V
-30
V
-5
V
-3
A
750
mW
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -40
-
Collector-Emitter Breakdown Voltage
BVCEO -30
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-0.3
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-1
DC Current Gain⁽¹⁾
hFE1
30
-
hFE2
100
160
Transition Frequency
fT
-
80
Output Capacitance
Cob
-
55
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE2
Rank
Q
P
Range
100~200
160~320
E
200~400
Max Unit
Test Conditions
-
V IC=-100µA
-
V IC=-1mA
-
V
IE=-10µA
-1
µA VCB=-30V
-1
µA VEB=-3V
-0.5
V IC=-2A, IB=-0.2A
-2
V IC=-2A, IB=-0.2A
-
-
IC=-20mA, VCE=-2V
400
-
IC=-1A, VCE=-2V
-
MHz IC=-0.1A, VCE=-5V
-
pF IE=0, VCB=-10V, f=1MHz