2SB564A Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SB564A
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier
applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-30
V
-25
V
-5
V
-1
A
800
mW
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO -30
-
-
Collector-Emitter Breakdown Voltage
BVCEO -25
-
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
Collector Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
Base-Emitter Saturation Voltage⁽¹⁾
DC Current Gain⁽¹⁾
ICBO
-
VCE(sat)
-
VBE(sat)
-
hFE
70
-
-100
-
-0.5
-
-1.2
-
400
Transition Frequency
fT
-
110
-
Output Capacitance
Cob
-
18
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
V
V
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-10mA, IB=0
IE=-100µA, IC=0
VCB=-30V, IE=0
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-6V, f=100MHz
VCB=-6V, f=1MHz
Classification of hFE
Rank
O
Range
70~140
Y
120~240
GR
200~400