2SB1426 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SB1426
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for DC-to-DC converter applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-20
V
-20
V
-6
V
-3
A
750
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO -20
-
-
Collector-Emitter Breakdown Voltage
BVCEO -20
-
-
Emitter-Base Breakdown Volatge
BVEBO
-6
-
-
Collector Cutoff Current
ICBO
-
-
-100
Emitter Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
DC Current Gain⁽¹⁾
IEBO
-
VCE(sat)
-
hFE
82
-
-100
-
-500
-
390
Transition Frequency
fT
-
240
-
Output Capacitance
Cob
-
35
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
mV
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
IC=-2A, IB=-0.1A
IC=-100mA, VCE=-2V
IC=-500mA, VCE=-2V, f=100MHz
VCB=-10V, f=1MHz, IE=0
Classification of hFE
Rank
P
Range
82~180
Q
120~270
R
180~390