2SA950 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SA950
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low-frequency power amplifier
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-35
V
-30
V
-5
V
-800
mA
600
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO -35
Collector-Emitter Breakdown Voltage
BVCEO -30
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾
VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
DC Current Gain⁽¹⁾
hFE1
45
hFE2
100
hFE3
40
Transition Frequency
fT
-
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
-
-
-0.1
-
-0.1
-0.28 -0.7
-
-1.3
-
-
-
320
-
-
120
-
19
-
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-2mA, IB=0
IE=-100µA, IC=0
VCB=-35V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-20mA
IC=-500mA, IB=-20mA
IC=-5mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-500mA, VCE=-1V
IC=-10mA, VCE=-5V
VCE=-10V, f=1MHz, IE=0
Classification of hFE2
Rank
O
Y
Range
100~200
160~320