2SA812 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SA812
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-60
V
-50
V
-5
V
-100
mA
150
mW
+150
o_C
-55 to +150 ^oC
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -60
Collector-Emitter Breakdown Voltage BVCEO -50
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
Base-Emitter On Voltage⁽¹⁾
DC Current Gain⁽¹⁾
IEBO
VCE(sat)
VBE(on)
hFE
-
-
-0.55
90
Transition Frequency
fT
-
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-0.18
-0.62
200
180
4.5
Max
-
-
-
-0.1
-0.1
-0.3
-0.65
600
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-60V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-1mA, VCE=-6V
IC=-1mA, VCE=-6V
IC=-10mA, VCE=-6V
VCB=-10V, f=1MHz, IE=0