2SA733 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SA733
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of AF amplifier
applicatioms.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Base Current
IB
-20
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
250
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) ^Min
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Voltage
BVCBO -60
-
-
Collector-Emitter Breakdown Volatge BVCEO -50
-
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
Collector Cutoff Current
ICBO
-
-
-0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-
-0.1
-0.18 -0.3
Base-Emitter On Voltage
DC Current Gain⁽¹⁾
Transition Frequency
VBE(on) -0.55 -0.62
-0.7
hFE
90
200
600
fT
100
180
-
Output Capacitance
Cob
-
4.5
6
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE
Rank
R
Range
90~180
Q
135~270
P
200~400
K
300~600
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IE=-1mA, IB=0
IE=-10µA, IC=0
VCB=-60V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-1mA, VCE=-6V
IC=-1mA, VCE=-6V
IC=-10mA, VCE=-6V
VCB=-10V, IE=0, f=1MHz