2SA673 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SA673
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-35
V
-35
V
-5
V
-500
mA
400
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Voltage
BVCBO -35
Collector-Emitter Breakdown Volatge BVCEO -35
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
DC Current Gain⁽¹⁾
hFE1
60
hFE2
35
Transition Frequency
fT
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
Max
-
-
-
-
-
-
-
-0.5
-
-0.5
-0.1 -0.6
-
-1.2
-
320
-
-
190
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
IC=-150mA, IB=-15mA
IC=-150mA, IB=-15mA
IC=-10mA, VCE=-3V
IC=-500mA, VCE=-3V
IC=-20mA, VCE=-6V
Classification of hFE1
Rank
B
C
Range
60~120
100~200
D
160~320