2SA1300 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SA1300
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use Strobe flash and medium power
amplifier applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
IC
IB
PD
TJ
TSTG
Rating Unit
-20
V
-20
V
-10
V
-6
V
-2
A
-5
A
-2
A
750
mW
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Emitter Breakdown Volatge
BVCEO -10
-
Emitter-Base Breakdown Voltage
BVEBO
-6
-
Collector Cutoff Current
ICBO
-
-
Emitter Cutoff Current
IEBO
-
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)
-
-0.3
Base-Emitter Voltage
VBE
-
-0.83
DC Current Gain⁽¹⁾
hFE1
140
-
hFE2
60
-
Transition Frequency
fT
-
140
Output Capacitance
Cob
-
50
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-100
-100
-0.5
-1.5
1000
-
-
-
Classification of hFE1
Rank
Y
GR
Range
140~280
200~400
BL
300~600
PE
500~1000
Unit
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=-10mA, IB=0
IE=-1mA, IC=0
VCE=-20V, IE=0
VBE=-6V, IC=0
IC=-2A, IB=-50mA
IC=-2A, VCE=-1V
IC=-0.5A, VCE=-1V
IC=-2A, VCE=-1V
IC=-0.5A, VCE=-1V
VCE=-10V, f=1KHz, IE=0