2N7002 Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N7002
TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET
Description
Designed for low voltage and low current applications
such as small servo motor control, power MOSFET
gate drivers, and other switching applications.
Pinning
1 = Gate
2 = Source
3 = Drain
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating
Drain-Source Voltage
VDSS
60
Drain-Gate Voltage (RGS=1MΩ)
VDGR
60
Gate-Source Voltage (Continuous)
VGS
20
Drain Current (Continuous, TC=25^oC)⁽¹⁾
ID
115
Drain Current (Pulsed)⁽²⁾
IDM
800
Total Power Dissipation
Derate above 25^oC
PD
200
1.8
Operating Junction Temperature
TJ -55 to+150
Storage Temperature
TSTG -55 to+150
Maximum Lead Temperature, for
10 Seconds Solding Purpose
TL
260
Unit
V
V
V
mA
mA
mW
mW/^oC
o_C
o_C
o_C
SOT-23
.020(0.50)
.012(0.30)
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.0043(0.11)
.0035(0.09)
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Sourse Forward Leakage Current
Gate-Sourse Reverse Leakage Current
Gate Threshold Voltage⁽²⁾
On-State Drain Current⁽²⁾
Static Drain-Source On-State Voltage⁽²⁾
Static Drain-Source On-State Resistance⁽²⁾
Forward Transconductance⁽²⁾
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max
V(BR)DSS
60
-
-
IDSS
-
-
1
IGSSF
-
-
100
IGSSR
-
-
-100
VGS(th)
1
-
2.5
ID(on)
500
-
-
VDS(on)1
-
- 0.375
VDS(on)2
-
-
3.75
RDS(on)1
-
-
7.5
RDS(on)2
-
-
7.5
gFS
80
-
-
Ciss
-
-
50
Coss
-
-
25
Crss
-
-
5
Thermal Resistance, Junction to Ambient
RθJA
-
-
625
(1)The Power Dissipation of the package may result in a lower continuous drain current.
(2)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
µA
nA
nA
V
mA
V
V
Ω
Ω
mS
pF
pF
pF
o_C/W
Test Conditions
ID=10µA, VGS=0
VDS=60V, VGS=0
VGSF=20V, VDS=0
VGSR=-20V, VDS=0
VDS=2.5V, ID=0.25mA
VDS>2VDS(on), VGS=10V
ID=50mA, VGS=5V
ID=500mA, VGS=10V
ID=50mA, VGS=5V
ID=500mA, VGS=10V
VDS>2VDS(on), ID=200mA
VDS=25V, VGS=0, f=1MHZ
-