2N7000 Datasheet, PDF (1/1 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N7000
TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET
Description
Designed for low voltage and low current applications
such as small servo motor control, power MOSFET
gate drivers, and other switching applications.
Pinning
1 = Source
2 = Gate
3 = Drain
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating
Drain-Source Voltage
VDSS
60
Drain-Gate Voltage (RGS=1MΩ)
VDGR
60
Gate-Source Voltage (Continuous)
VGS
20
Drain Current (Continuous, TC=25^oC)
ID
200
Drain Current (Pulsed)⁽¹⁾
IDM
500
Total Power Dissipation
Derate above 25^oC
PD
350
2.8
Operating Junction Temperature
TJ -55 to+150
Storage Temperature
TSTG -55 to+150
Maximum Lead Temperature, for
10 Seconds Solding Purpose
TL
300
Unit
V
V
V
mA
mA
mW
mW/^oC
o_C
o_C
o_C
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Sourse Forward Leakage Current
Gate-Sourse Reverse Leakage Current
Gate Threshold Voltage⁽¹⁾
On-State Drain Current⁽¹⁾
Static Drain-Source On-State Voltage⁽¹⁾
Static Drain-Source On-State Resistance⁽¹⁾
Forward Transconductance⁽¹⁾
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ
V(BR)DSS
60
-
IDSS
-
-
IGSSF
-
-
IGSSR
-
-
VGS(th)
0.8
-
ID(on)
75
-
VDS(on)1
-
-
VDS(on)2
-
-
RDS(on)1
-
-
RDS(on)2
-
-
gFS
100
-
Ciss
-
-
Coss
-
-
Crss
-
-
Thermal Resistance, Junction to Ambient
RθJA
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
1
10
-10
3
-
0.45
2.5
6
5
-
60
25
5
357
Unit
V
µA
nA
nA
V
mA
V
V
Ω
Ω
µS
pF
pF
pF
o_C/W
Test Conditions
ID=10µA, VGS=0
VDS=48V, VGS=0
VGSF=15V, VDS=0
VGSR=-15V, VDS=0
VDS=3V, ID=1mA
VDS=4.5V, VDS=10V
ID=75mA, VGS=4.5V
ID=500mA, VGS=10V
ID=75mA, VGS=4.5V
ID=500mA, VGS=10V
VDS=10V, ID=200mA
VDS=25V, VGS=0, f=1MHZ
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