2N6517 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N6517
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
350
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
625
mW
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
TO-92
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 350
-
-
Collector-Emitter Breakdown Voltage BVCEO 350
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
50
EmitterCutoff Current
IEBO
-
-
50
VCE(sat)1
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)2
-
-
0.30
-
0.35
VCE(sat)3
-
-
0.50
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
0.75
-
0.85
Base-Emitter On Voltage⁽¹⁾
VBE(sat)3
-
VBE(on)
-
-
0.90
-
2
hFE1
20
-
-
DC Current Gain⁽¹⁾
hFE2
30
hFE3
30
-
-
-
200
hFE4
20
-
200
Transition Frequency
fT
40
-
200
Output Capacitance
Cob
-
-
6
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=250V, IE=0
VEB=5V, IC=0
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=100mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=50mA, VCE=10V
IC=10mA, VCE=20V, f=20MHz
VCB=20V, f=1MHz, IE=0