2N5401 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N5401
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-160
V
-150
V
-5
V
-600
mA
625
mW
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
TO-92
2^o Typ
2^o Typ
(1.0.2570)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ Max
Collector-Base Breakdown Volatge
BVCBO -160
-
-
Collector-Emitter Breakdown Voltage BVCEO -150
-
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
Collector Cutoff Current
ICBO
-
-
-50
Emitter Cutoff Current
IEBO
-
-
-50
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
-0.2
-
-0.5
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
-1
-
-1
DC Current Gain⁽¹⁾
hFE1
50
hFE2
80
-
-
-
400
hFE3
50
-
-
Transition Frequency
fT
100
-
300
Output Capacitance
Cob
-
-
6
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE2
Rank
A
B
Range
80~200
100~240
C
160~400
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-120V, IE=0
VEB=-3V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-50mA, VCE=-5V
IC=-10mA, VCE=-10V, f=100MHz
VCB=-10V, f=1MHz, IE=0