2N4401 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN switching transistor

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N4401
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
600
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
625
mW
+150
o_C
-55 to +150 ^oC
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
TO-92
2^o Typ
2^o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO 60
-
-
Collector-Emitter Breakdown Voltage BVCEO 40
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICEX
-
-
0.1
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
-
0.4
-
0.75
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1 0.75
-
0.95
VBE(sat)2
-
-
1.2
hFE1
20
-
-
DC Current Gain⁽¹⁾
hFE2
40
-
-
hFE3
80
-
-
hFE4
100
-
300
hFE5
40
-
-
Transition Frequency
fT
250
-
-
Output Capacitance
Cob
-
-
6.5
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE4
Rank
A
B
Range
100~210
190~300
Unit
V
V
V
µA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCE=35V, VBE=0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
IC=150mA, VCE=1V
IC=500mA, VCE=2V
IC=20mA, VCE=10V, f=100MHz
VCB=5V, IE=0, f=1MHz