2N3773 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,140V,150W)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N3773
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high power audio, disk head positioners,
and other linear applications.
Pinning
1 = Base
2 = Emitter
Case = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak)
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VCEX
VEBO
IC
IC
PD
TJ
TSTG
Rating
Unit
160
V
140
V
160
V
7
V
16
A
30
A
150
W
+200
o_C
-65 to +200
o_C
TO-3
.135
(3.43)
Max
(319.5.9763)Max
.875(22.23)
.759(19.28)
.169(4.30)
.151(3.84)
.043(1.09)
.038(0.97)
1.197(30.40)
1.177(29.90)
.681(17.30)
.655(16.64)
2
.225(5.72)
.205(5.20)
1
.450(11.43)
.250(6.35)
.480(12.19)
.440(11.18)
.169(4.30)
.151(3.84)
.440(11.18) 1.050(26.67)
.420(10.67) 1.011(25.68)
Case: Collector
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
Base-Emitter On Voltage⁽¹⁾
DC Current Gain⁽¹⁾
Symbol Min
Typ
Max
VCEO(sus) 140
-
-
VCEX(sus) 160
-
-
VCER(sus) 150
-
-
ICEO
-
-
10
-
ICEX
-
-
2
-
10
ICBO
-
-
2
IEBO
-
-
5
VCE(sat)1
-
-
1.4
VCE(sat)2
-
-
4
VBE(on)
-
-
2.2
hFE1
15
-
60
hFE2
5
-
-
Second Breakdown Collector with
Base Forward Bias
Is/b
1.5
-
-
Small-Signal Current Gain
hfe
40
-
-
Magnitude of Common-Emitter Small-Signal,
Short-Circuit, Forward Current Transfer Ratio
I hfe I
4
-
-
(1)Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Unit
Test Conditions
V
IC=0.2A, IB=0
V
IC=0.1A, VBE(off)=1.5V, RBE=100Ω
V
IC=0.1A, RBE=100Ω
mA VCE=120V, IB=0
mA VCE=140V, VBE(off)=1.5V
mA
VCE=140V, VBE(off)=1.5V, TC=150^oC
mA VCB=140V, IE=0
mA VBE=7V, IC=0
V
IC=8A, IB=0.8A
V
IC=16A, IB=3.2A
V
IC=8A, VCE=4V
-
IC=8A, VCE=4V
-
IC=16A, VCE=4V
A
VCE=100V, t=1.0s, Non-repetitive
-
IC=1A, VCE=4V, f=1KHz
-
IC=1A, f=50KHz