2N3055 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,50V,115W)

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N3055
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for power switching circuits, series and
shunt regulators, output stages and high fidelity
amplifiers.
Pinning
1 = Base
2 = Emitter
Case = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VCEV
VEBO
IC
IB
PD
TJ
TSTG
Rating
Unit
100
V
60
V
70
V
7
V
15
A
7
A
115
W
+200
o_C
-65 to +200
o_C
TO-3
.135
(3.43)
Max
(319.5.9763)Max
.875(22.23)
.759(19.28)
.169(4.30)
.151(3.84)
.043(1.09)
.038(0.97)
1.197(30.40)
1.177(29.90)
.681(17.30)
.655(16.64)
2
.225(5.72)
.205(5.20)
1
.450(11.43)
.250(6.35)
.480(12.19)
.440(11.18)
.169(4.30)
.151(3.84)
.440(11.18) 1.050(26.67)
.420(10.67) 1.011(25.68)
Case: Collector
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Sustaining Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
Base-Emitter On Voltage⁽¹⁾
DC Current Gain⁽¹⁾
Symbol Min
Typ
Max
VCEO(sus)
60
-
-
VCER(sus)
70
-
-
ICEO
-
-
0.7
-
-
1
ICEX
-
-
5
IEBO
-
-
5
VCE(sat)1
-
-
1.1
VCE(sat)2
-
-
3
VBE(on)
-
-
1.5
hFE1
20
-
70
hFE2
5
-
-
Second Breakdown Collector with
Base Forward Bias
Is/b
2.87
-
-
Current Gain - Bandwidth Product
fT
2.5
-
-
Small-Signal Current Gain
hfe
15
-
120
Small-Signal Current Gain Cutoff Frequency fhfe
10
-
-
(1)Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Unit
V
V
mA
mA
mA
mA
V
V
V
-
-
A
MHz
-
KHz
Test Conditions
IC=0.2A, IB=0
IC=0.2A, RBE=100Ω
VCE=30V, IB=0
VCE=100V, VBE(off)=1.5V
VCE=100V, VBE(off)=1.5V, TC=150^oC
VBE=7V, IC=0
IC=4A, IB=0.4A
IC=10A, IB=3.3A
IC=4A, VCE=4V
IC=4A, VCE=4V
IC=10A, VCE=4V
VCE=40V, t=1.0s, Non-repetitive
IC=0.5A, VCE=10V, f=1MHz
IC=10A, VCE=4V, f=1KHz
IC=1A, VCE=4V, f=1KHz