2N2955 Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N2955
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for power switching circuits, series and
shunt regulators, output stages and high fidelity
amplifiers.
Pinning
1 = Base
2 = Emitter
Case = Collector
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VCEV
VEBO
IC
IB
PD
TJ
TSTG
Rating
Unit
-100
V
-60
V
-70
V
-7
V
-15
A
-7
A
115
W
+200
o_C
-65 to +200
o_C
TO-3
.135
(3.43)
Max
(319.5.9763)Max
.875(22.23)
.759(19.28)
.169(4.30)
.151(3.84)
.043(1.09)
.038(0.97)
1.197(30.40)
1.177(29.90)
.681(17.30)
.655(16.64)
2
.225(5.72)
.205(5.20)
1
.450(11.43)
.250(6.35)
.480(12.19)
.440(11.18)
.169(4.30)
.151(3.84)
.440(11.18) 1.050(26.67)
.420(10.67) 1.011(25.68)
Case: Collector
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Sustaining Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage⁽¹⁾
Base-Emitter On Voltage⁽¹⁾
DC Current Gain⁽¹⁾
Symbol Min
Typ
Max
VCEO(sus)
-60
-
-
VCER(sus)
-70
-
-
ICEO
-
-
-0.7
-
ICEX
-
-
-1
-
-5
IEBO
-
-
-5
VCE(sat)1
-
-
-1.1
VCE(sat)2
-
-
-3
VBE(on)
-
-
-1.5
hFE1
20
-
70
hFE2
5
-
-
Second Breakdown Collector with
Base Forward Bias
Is/b
-2.87
-
-
Current Gain - Bandwidth Product
fT
2.5
-
-
Small-Signal Current Gain
hfe
15
-
120
Small-Signal Current Gain Cutoff Frequency fhfe
10
-
-
(1)Pulse Test: Pulse Width 300µs, Duty Cycle 2%
Unit
V
V
mA
mA
mA
mA
V
V
V
-
-
A
MHz
-
KHz
Test Conditions
IC=-0.2A, IB=0
IC=-0.2A, RBE=100Ω
VCE=-30V, IB=0
VCE=-100V, VBE(off)=-1.5V
VCE=-100V, VBE(off)=-1.5V, TC=150^oC
VBE=-7V, IC=0
IC=-4A, IB=-0.4A
IC=-10A, IB=-3.3A
IC=-4A, VCE=-4V
IC=-4A, VCE=-4V
IC=-10A, VCE=-4V
VCE=-40V, t=1.0s, Non-repetitive
IC=-0.5A, VCE=-10V, f=1MHz
IC=-10A, VCE=-4V, f=1KHz
IC=-1A, VCE=-4V, f=1KHz