1N914 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diode

DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
1N914
THRU
1N 1N
4148 4454
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES
VOLTAGE RANGE -50 to 100 Volts
CURRENT - 0.075 to 0.2 Ampere
FEATURES
* Silicon epitaxial planar diodes
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High speed switching
* High current capability
* High reliability
MECHANICAL DATA
* Case: Glass sealed case
* Lead: MIL-STD-202E, Method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.13 gram
DO-34 / DO-35
25.0MIN
0.52Ø
L
2.0MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
25.0MIN
DO-34 DO-35
L: ^2.9
MAX
4.2
MAX
Dimensions in millimeters
SYMBOL 1N914 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454
Maximum Recurrent Peak Reverse Voltage
VRRM
100 100
50
75
35 100 75
Maximum Average Rectified Current
Maximum Power Dissipation Tamb=25^oC
Io
75
150 200 150 150 150 150
Ptot
250 500 500 500 500 500 500
Maximum Forward Voltage
VF
1.0/10 1.0/10 1.0/200 1.0/50 1.0/30 1.0/100 1.0/10
Maximum Reverse Current
IR
5000/75 5000/75 100/50 50/50 100/25 5000/75 100/10
Maximum Reverse Recovery Time
trr
4.0
4.0
4.0
2.0
2.0
4.0
4.0
Typical Junction Capacitance
CJ
4.0
Operating and Storage Temperature Range
TJ,TSTG
-65 to + 200
NOTE: 1-1N914A, 1N914B IS SAME AS 1N914, EXCEPT DIFFERENT IN FORWARD VOLTAGE:
1N914A-1.0/20 V/mA
1N914B-1.0/100 V/mA
2.Suffix "M" stands for "DO-34" package.(e.g.:1N4148M)
UNITS
V
mA
mW
V/mA
nA/V
nS
pF
o_C
98
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